DocumentCode
2679905
Title
Fundamental performance limits and scaling of a CMOS passive double-balanced mixer
Author
Komoni, Krenar ; Sonkusale, Sameer ; Dawe, Geoff
Author_Institution
Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA
fYear
2008
fDate
22-25 June 2008
Firstpage
297
Lastpage
300
Abstract
In this paper, fundamental performance limits and scaling of a double-balanced passive mixer are examined. Analysis of the passive double-balanced mixer will show how its performance metrics are directly affected by the down-scaling of the transistor gate length, LG. We analyze the performance in terms of conversion gain (GC), 1-dB compression point (P1-dB) which we derive, and SSB Noise Figure (NF). We will show that as CMOS process technology evolves, the double-balanced passive mixer architecture will become more favorable and yield improved performance. This is verified through simulation and modeling results for mixers designed in CMOS 350 nm to 32 nm technology. We introduce a mixerpsilas figure-of-merit (FOMMIXER) to compare performance with technology scaling. Circuit designers and system architects can use this paper to find a suitable process technology that will meet their specifications.
Keywords
CMOS integrated circuits; mixers (circuits); passive networks; CMOS passive double-balanced mixers; circuit designers; double-balanced passive mixer architecture; noise figure 1 dB; performance metrics; size 350 nm to 32 nm; system architects; transistor gate length; CMOS process; CMOS technology; Isolation technology; Noise figure; Performance analysis; RF signals; Radio frequency; Semiconductor device modeling; Transceivers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems and TAISA Conference, 2008. NEWCAS-TAISA 2008. 2008 Joint 6th International IEEE Northeast Workshop on
Conference_Location
Montreal, QC
Print_ISBN
978-1-4244-2331-6
Electronic_ISBN
978-1-4244-2332-3
Type
conf
DOI
10.1109/NEWCAS.2008.4606380
Filename
4606380
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