DocumentCode :
2679940
Title :
Influence of carrier gas on cu nucleation, film properties and MOCVD reaction kinetics
Author :
Röber, J. ; Riedel, S. ; Schulz, S.E. ; Gebner, T.
Author_Institution :
TU Chemmitz-Zwickau
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
25
Lastpage :
26
Keywords :
Additives; Argon; Conductivity; Copper; Hydrogen; Kinetic theory; MOCVD; Metallization; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887499
Filename :
887499
Link To Document :
بازگشت