Design and application of ultrathin SOI MOSFETs

Summary form only given. The fundamental electric properties of ultrathin SOI MOSFETs are reviewed and their prospects are discussed. Ultrathin SOI MOSFETs provide a viable LSI technology where there is a possibility that ultimate performance of MOS devices can be realized. The operation limit of ultrathin SOI MOSFETs should be pursued both theoretically and experimentally. Basic concepts for device optimization should be established. At the same time, detailed characterization of ultrathin SOI devices should be continued. The development of crystal technology is not crucial for the development of the device technology