Design and application of ultrathin SOI MOSFETs

Author

Yoshimi, Makoto

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1989

fDate

3-5 Oct 1989

Firstpage

145

Lastpage

146

Abstract

Summary form only given. The fundamental electric properties of ultrathin SOI MOSFETs are reviewed and their prospects are discussed. Ultrathin SOI MOSFETs provide a viable LSI technology where there is a possibility that ultimate performance of MOS devices can be realized. The operation limit of ultrathin SOI MOSFETs should be pursued both theoretically and experimentally. Basic concepts for device optimization should be established. At the same time, detailed characterization of ultrathin SOI devices should be continued. The development of crystal technology is not crucial for the development of the device technology

Keywords

MOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; large scale integration; semiconductor technology; semiconductor-insulator boundaries; LSI technology; Si-SiO₂; detailed characterization; device optimization; device technology; fundamental electric properties; operation limit; prospects; ultimate performance; ultrathin SOI MOSFETs; Carrier confinement; Doping; Electric breakdown; Energy barrier; Fluctuations; Impurities; MOS devices; MOSFETs; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69807

Filename

69807