DocumentCode
2680017
Title
The effect of an additional ti layer in a sub-/spl mu/m double level Ti/TiN-AlSiCu-TiN metallization for a CMOS-logic-process
Author
Stegemann, K.H. ; Beyer, C. ; Kahlert, V. ; Heinig, V. ; Pahner, J.
Author_Institution
Zentrum Mikroelektronik Dresden
fYear
1997
fDate
16-19 March 1997
Firstpage
40
Lastpage
42
Keywords
Application specific integrated circuits; Atherosclerosis; CMOS logic circuits; CMOS technology; Contact resistance; Electromigration; Metallization; Optical microscopy; Scanning electron microscopy; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1998.887504
Filename
887504
Link To Document