DocumentCode :
2680112
Title :
LPCVD Me-Si-N (Me = Ta, Ti, W, Re) diffusion barriers in Si/SiO,/Cu metallizations
Author :
Blanquet, E. ; Dutron, A.M. ; Ghetta, V. ; Bernard, C. ; Madar, R.
Author_Institution :
LTPCM-ENSEEG
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
53
Lastpage :
53
Keywords :
Copper; Electric resistance; Inorganic materials; Integrated circuit interconnections; Metallization; Morphology; Semiconductor devices; Semiconductor materials; Spectroscopy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887510
Filename :
887510
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680112
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