DocumentCode
2680112
Title
LPCVD Me-Si-N (Me = Ta, Ti, W, Re) diffusion barriers in Si/SiO,/Cu metallizations
Author
Blanquet, E. ; Dutron, A.M. ; Ghetta, V. ; Bernard, C. ; Madar, R.
Author_Institution
LTPCM-ENSEEG
fYear
1997
fDate
16-19 March 1997
Firstpage
53
Lastpage
53
Keywords
Copper; Electric resistance; Inorganic materials; Integrated circuit interconnections; Metallization; Morphology; Semiconductor devices; Semiconductor materials; Spectroscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1998.887510
Filename
887510
Link To Document