DocumentCode
2680154
Title
Sources of Non-Linearity in GaAs MESFET Frequency Multipliers
Author
Camargo, E. ; Soares, R. ; Perichon, R.A. ; Goloubkoff, M.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
343
Lastpage
345
Abstract
Transconductance and output conductance non-linearities of a single gate GaAs MESFET are used to define promising multiplier bias levels and harmonic loads. The model enables design of 25 mW 4-8 GHz doubler with 6 dB gain, 20 mW 4-12 GHz tripler with 3 dB gain and 2 mW 4-16 GHz quadruple with 2 dB gain.
Keywords
Equivalent circuits; Frequency conversion; Frequency measurement; Gain; Gallium arsenide; Harmonic analysis; MESFETs; Power generation; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130906
Filename
1130906
Link To Document