Title :
Sources of Non-Linearity in GaAs MESFET Frequency Multipliers
Author :
Camargo, E. ; Soares, R. ; Perichon, R.A. ; Goloubkoff, M.
fDate :
May 31 1983-June 3 1983
Abstract :
Transconductance and output conductance non-linearities of a single gate GaAs MESFET are used to define promising multiplier bias levels and harmonic loads. The model enables design of 25 mW 4-8 GHz doubler with 6 dB gain, 20 mW 4-12 GHz tripler with 3 dB gain and 2 mW 4-16 GHz quadruple with 2 dB gain.
Keywords :
Equivalent circuits; Frequency conversion; Frequency measurement; Gain; Gallium arsenide; Harmonic analysis; MESFETs; Power generation; Transconductance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130906
