• DocumentCode
    2680164
  • Title

    Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications

  • Author

    Baud, L. ; Passermard, G. ; Gobil, Y. ; M´Saad, H. ; Corte, A. ; Pires, F. ; Fugier, P. ; Noel, P. ; Rabinzohn, P. ; Beinglass, I.

  • Author_Institution
    Applied Materials
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    64
  • Lastpage
    67
  • Keywords
    Absorption; Annealing; Chemistry; Dielectric materials; Dielectric thin films; Metallization; Moisture; Semiconductor thin films; Silicon; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1998.887514
  • Filename
    887514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2680164