DocumentCode :
2680164
Title :
Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications
Author :
Baud, L. ; Passermard, G. ; Gobil, Y. ; M´Saad, H. ; Corte, A. ; Pires, F. ; Fugier, P. ; Noel, P. ; Rabinzohn, P. ; Beinglass, I.
Author_Institution :
Applied Materials
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
64
Lastpage :
67
Keywords :
Absorption; Annealing; Chemistry; Dielectric materials; Dielectric thin films; Metallization; Moisture; Semiconductor thin films; Silicon; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887514
Filename :
887514
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680164
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