DocumentCode :
268020
Title :
Finfet with fully PH-responsive HFO2 as highly stable biochemical sensor
Author :
Rigante, S. ; Wipf, M. ; Bazigos, Antonios ; Bedner, K. ; Bouvet, D. ; Ionescu, A.M.
Author_Institution :
EPFL, Nanoelectronic Devices Lab., Lausanne, Switzerland
fYear :
2014
fDate :
26-30 Jan. 2014
Firstpage :
1063
Lastpage :
1066
Abstract :
In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO2 gate oxide demonstrate full pH-response with ΔVth ≈ 56 mV/pH. High readout sensitivity Sout = ΔId/Id ≈ 43% is achieved in combination with excellent device electronic properties, i.e. SS = 77 mV/dec and Ion/Ioff =1.5×106. High long-term stability is proven over 4.5 days with a drift in time limited at 0.14 mV/h.
Keywords :
MOSFET circuits; biochemistry; biosensors; chemical sensors; hafnium compounds; lab-on-a-chip; pH; FinFET-based sensors; HfO2; biochemical sensor; electronic properties; fin field effect transistors; high readout sensitivity; lab-on-a-chip platform; ph-responsive hafnium(IV) oxide; FinFETs; Hafnium compounds; Liquids; Logic gates; Nanobioscience; Sensitivity; Sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
Type :
conf
DOI :
10.1109/MEMSYS.2014.6765828
Filename :
6765828
Link To Document :
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