• DocumentCode
    268026
  • Title

    Nano-opto-mechanical memory based on optical gradient force induced bistability

  • Author

    Dong, Binhong ; Huang, J.G. ; Cai, H. ; Kropelnicki, Piotr ; Randles, A.B. ; Gu, Yuan Dong ; Liu, A.Q.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2014
  • fDate
    26-30 Jan. 2014
  • Firstpage
    1091
  • Lastpage
    1094
  • Abstract
    A bistable nano-opto-mechanical memory is designed, fabricated and experimentally demonstrated. A doubly-clamped silicon beam is deformed by optical gradient force generated from the ring resonator. The doubly-clamped silicon beam can be bended due to attractive optical gradient force generated by ring resonator. Due to the non-linear behavior of optical gradient force, the silicon beam has two stable positions which can be switched by controlling the light power transmitted inside the ring resonator. The nano-size of the memory enable for large scale integration, high speed operation and low power consumption. It has other potential applications such as optical switch, logic gate and actuator.
  • Keywords
    elemental semiconductors; integrated optics; integrated optoelectronics; nanoelectromechanical devices; nanophotonics; nonlinear optics; optical bistability; optical control; optical design techniques; optical fabrication; optical resonators; optical storage; silicon; Si; actuator; attractive optical gradient force; doubly-clamped silicon beam; high speed operation; large scale integration; light power control; logic gate; low power consumption; nanooptomechanical memory; nonlinear optical gradient force; optical gradient force-induced bistability; optical switch; ring resonator; Force; Optical bistability; Optical fibers; Optical pumping; Optical ring resonators; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
  • Conference_Location
    San Francisco, CA
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2014.6765835
  • Filename
    6765835