Statistical aging analysis with process variation consideration

Author

Han, Sangwoo ; Choung, Joohee ; Kim, Byung-Su ; Lee, Bong Hyun ; Choi, Hungbok ; Kim, Juho

Author_Institution

Dept. of Comput. Sci. Eng., Sogang Univ., Seoul, South Korea

fYear

2011

fDate

7-10 Nov. 2011

Firstpage

412

Lastpage

419

Abstract

As CMOS devices become smaller, process and aging variations become a major issue for circuit reliability and yield. In this paper, we analyze the effects of process variations on aging effects such as hot carrier injection (HCI) and negative bias temperature instability (NBTI). Using Monte-Carlo based transistor-level simulations including principal component analysis (PCA), the correlations between process variations and aging variations are considered. The accuracy of analysis is improved (2-7%) compared to other methods in which the correlations are ignored, especially in smaller technologies.

Keywords

CMOS integrated circuits; Monte Carlo methods; ageing; integrated circuit reliability; principal component analysis; CMOS devices; HCI; Monte-Carlo based transistor-level simulations; NBTI; aging effects; circuit reliability; hot carrier injection; negative bias temperature instability; principal component analysis; process variation; statistical aging analysis; Aging; Analytical models; Correlation; Human computer interaction; Integrated circuit modeling; Threshold voltage; Transistors; HCI; NBTI; Reliability; aging variation; process variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on

Conference_Location

San Jose, CA

ISSN

1092-3152

Print_ISBN

978-1-4577-1399-6

Electronic_ISBN

1092-3152

Type

conf

DOI

10.1109/ICCAD.2011.6105362

Filename

6105362