DocumentCode :
2680278
Title :
WNx/W as a low-resistance gate material and local interconnect
Author :
Galewski, C.J. ; Gadgil, P.N. ; Matthysse, L.D. ; Sans, C.A.
Author_Institution :
GENUS
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
88
Lastpage :
90
Keywords :
Amorphous materials; Annealing; Conductivity; Crystallization; Inorganic materials; Metallization; Plasma chemistry; Plasma temperature; Sputtering; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887522
Filename :
887522
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680278
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