• DocumentCode
    268028
  • Title

    Piezoelectric buckling-based NEMS relays for millivolt mechanical logic

  • Author

    Zaghloul, Usama ; Piazza, Gianluca

  • Author_Institution
    Electr. & Comput. Eng. Dept., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • fYear
    2014
  • fDate
    26-30 Jan. 2014
  • Firstpage
    1099
  • Lastpage
    1102
  • Abstract
    We report on the design, fabrication, characterization, and scaling analysis of buckling-based NEMS relays that use, for the first time, piezoelectric actuation. The generated stress from anchored piezoelectric films is employed to buckle a clamped-clamped beam to connect the source and drain, while the residual stress is used to control the actuation voltage. This demonstration is the first of its kind to exploit residual stress to deliver a highly scalable switching mechanism that exhibits low actuation voltage (~1.8 V), and uniquely achieves an equivalent electric body bias via mechanical methods. Analytical and FEA simulation show a linear dependence of the switching voltage on the residual stress, while the voltage vs. stress tuning slope is reduced linearly with scaling the piezoelectric film thickness (-16.6 mV/MPa for 10 nm thick AlN film). A scaling analysis shows that millivolt switching is possible for aggressively miniaturized relays.
  • Keywords
    finite element analysis; nanoelectromechanical devices; piezoelectric devices; relays; voltage control; FEA simulation; actuation voltage control; equivalent electric body bias; finite element analysis; mechanical methods; millivolt mechanical logic; piezoelectric actuation; piezoelectric buckling-based NEMS relays; piezoelectric film thickness; piezoelectric films; size 10 nm; voltage 1.8 V; Films; III-V semiconductor materials; Nanoelectromechanical systems; Relays; Residual stresses; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
  • Conference_Location
    San Francisco, CA
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2014.6765837
  • Filename
    6765837