Title :
Light-induced infrared absorption in Ru-doped Bi12TiO20 single crystals
Author :
Marinova, V. ; Lin, Shiuan Huei ; Piquette, S. ; Gospodinov, Marin ; Hsu, Ken Yuh
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper presents measurements of light-induced near infrared absorption in Bi12TiO20 (BTO) crystals highly doped with Ru. According to the light-induced absorption dark decay measurements it is supposed that Ru creates two different levels: Ru3+4+/ and Ru4+5+/ located "more shallow" than the deep one with respect to the valence band. Each of these two levels has different contribution to the light-induced absorption and different thermal ionization rates β, so the interaction between them can be neglected. After pump light illumination a redistribution of electrons from the deep into the shallow levels occurs and as a result absorption is changed, because the absorption cross-section is different for the deep and the shallow traps. On the basis of these preliminary experimental results the Ru-doped BTO crystal is proposed as a promising material for near-infrared photorefractive applications.
Keywords :
bismuth compounds; deep levels; infrared spectra; photorefractive materials; ruthenium; valence bands; Bi12TiO20:Ru; Ru-doped BTO crystal; absorption cross-section; dark decay measurements; deep level; electron redistribution; infrared absorption; light-induced absorption; near-infrared photorefractive applications; pump light illumination; thermal ionization; valence band; Bismuth; Crystals; Diodes; Electromagnetic wave absorption; Lamps; Physics; Probes; Roads; Solid state circuits; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1276981