DocumentCode :
268052
Title :
A multi-material Q-boosted low phase noise optomechanical oscillator
Author :
Beyazoglu, Turker ; Rocheleau, Tristan O. ; Grutter, Karen E. ; Grine, Alejandro J. ; Wu, Ming C. ; Nguyen, Clark T.-C
Author_Institution :
Univ. of California, Berkeley, Berkeley, CA, USA
fYear :
2014
fDate :
26-30 Jan. 2014
Firstpage :
1193
Lastpage :
1196
Abstract :
A Radiation Pressure driven Optomechanical Oscillator (RP-OMO) comprised of attached concentric rings of polysilicon and silicon nitride has achieved a first demonstration of a mixed material optomechanical device, posting a mechanical Qm of 22,300 at 52 MHz, which is more than 2× larger than previous single-material silicon nitride devices [1]. With this Qm, the RP-OMO exhibits a best-to-date phase noise of -125 dBc/Hz at 5 kHz offset from its 52-MHz carrier - a 12 dB improvement from the previous best by an RP-OMO constructed of silicon nitride alone [1]. The key to achieving this performance is the unique mechanical Q-boosting design where most of the vibrational energy is stored by the high-Qm polysilicon inner ring which in turn boosts the overall Qm over that of silicon nitride, all while retaining the high optical Qo >190,000 of silicon nitride material. Simultaneous high Qo and Qm reduces the optical threshold power for oscillation, allowing this multi-material RP-OMO to achieve its low phase noise with an input laser power of only 3.6 mW.
Keywords :
elemental semiconductors; oscillators; phase noise; silicon; silicon compounds; Si-SiN; concentric rings; frequency 52 MHz; mixed material optomechanical device; multimaterial Q-boosted low phase noise optomechanical oscillator; polysilicon; power 3.6 mW; radiation pressure driven optomechanical oscillator; silicon nitride; vibrational energy; Optical coupling; Optical feedback; Optical fibers; Optical pumping; Optical resonators; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
Type :
conf
DOI :
10.1109/MEMSYS.2014.6765861
Filename :
6765861
Link To Document :
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