Title :
Continuous-wave and time-resolved photoluminescence analysis of defect density evolution in silicon implanted borosilicate glass
Author :
Lin, Chun-Jung ; Lin, Gong-Ru
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The study in lengthened photoluminescent lifetime of the silicon-implanted borosilicate glass from 1.7 ns to 2.8 ns after low-temperature annealing reveals that the decrease in NBOHC defect density with activation energy of 2.63 eV is up to one order of magnitude.
Keywords :
annealing; borosilicate glasses; elemental semiconductors; optical glass; photoluminescence; silicon; time resolved spectra; 1.7 to 2.8 ns; 2.63 eV; B2O3-SiO2:Si; NBOHC defect density; continuous-wave photoluminescence; defect density evolution; low-temperature annealing; silicon implanted borosilicate glass; time-resolved photoluminescence; Annealing; Glass; Silicon;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1276989
