• DocumentCode
    2680608
  • Title

    Continuous-wave and time-resolved photoluminescence analysis of defect density evolution in silicon implanted borosilicate glass

  • Author

    Lin, Chun-Jung ; Lin, Gong-Ru

  • Author_Institution
    Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    2
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    The study in lengthened photoluminescent lifetime of the silicon-implanted borosilicate glass from 1.7 ns to 2.8 ns after low-temperature annealing reveals that the decrease in NBOHC defect density with activation energy of 2.63 eV is up to one order of magnitude.
  • Keywords
    annealing; borosilicate glasses; elemental semiconductors; optical glass; photoluminescence; silicon; time resolved spectra; 1.7 to 2.8 ns; 2.63 eV; B2O3-SiO2:Si; NBOHC defect density; continuous-wave photoluminescence; defect density evolution; low-temperature annealing; silicon implanted borosilicate glass; time-resolved photoluminescence; Annealing; Glass; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1276989
  • Filename
    1276989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2680608