DocumentCode :
2680610
Title :
Reduction of molybdenum resistivity by a seed layer of Ti-W
Author :
Franssila, S. ; Kattelus, H. ; Nykanen, E.
Author_Institution :
VTT Electronics
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
140
Lastpage :
142
Keywords :
Argon; Conductive films; Conductivity; Inorganic materials; Metallization; Plasma temperature; Rapid thermal annealing; Silicon; Sputtering; Stress control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887548
Filename :
887548
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680610
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