DocumentCode :
2680708
Title :
Design and Performance of Dual-Gate GaAs MESFET Up-Converter
Author :
de Salles, A.A.
fYear :
1983
fDate :
May 31 1983-June 3 1983
Firstpage :
440
Lastpage :
442
Abstract :
Design procedure and experimental results for a GaAs MESFET Up-Converter using a dual gate device are presented. DC and S parameter measurements are used to estimate the appropriate biasing and matching conditions. High conversion gain (~8dB) and moderate noise performance (~7dB) were obtained.
Keywords :
Circuit noise; FETs; Filters; Frequency conversion; Gallium arsenide; Local oscillators; MESFET circuits; Performance gain; Scattering parameters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1983.1130940
Filename :
1130940
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680708
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