DocumentCode
2680711
Title
Optical characterization of strong carrier-phonon interactions in single quantum dots
Author
Toda, Y. ; Inoue, T. ; Nakaoka, T. ; Ishida, S. ; Arakawa, Y.
Author_Institution
Hokkaido Univ., Sapporo, Japan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Phonon-assisted transitions in single self-assembled InGaAs quantum dots are investigated by photoluminescence (PL) and PL excitation (PLE) spectroscopy. Under nearly resonant conditions of the excitonic ground state, a broad sideband is observed in both PL and PLE. The adiabatic description with the localized acoustic phonons well explains the observed spectra.
Keywords
III-V semiconductors; electron-phonon interactions; gallium compounds; ground states; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; InGaAs; PL excitation spectroscopy; excitonic ground state; localized acoustic phonons; optical characterization; phonon-assisted transitions; photoluminescence; self-assembled quantum dots; strong carrier-phonon interactions; Acoustic emission; Optical scattering; Phonons; Photoluminescence; Quantum dots; Spectroscopy; Stationary state; Stimulated emission; US Department of Transportation; Ultraviolet sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1276998
Filename
1276998
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