• DocumentCode
    2680717
  • Title

    Chemical beam epitaxy of CoGa on GaAs using GaEt3 and CpCo(CO)2 as dual organometallic sources

  • Author

    Viguier, N. ; Maury, F.

  • Author_Institution
    Laboratoire de Cristallochimie
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    158
  • Lastpage
    160
  • Keywords
    Chemicals; Epitaxial growth; Gallium arsenide; Intermetallic; Lattices; Metallization; Molecular beam epitaxial growth; Temperature distribution; Thermal stability; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1998.887555
  • Filename
    887555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2680717