DocumentCode :
2680831
Title :
Raman study of tungsten disilicide formation in thin films
Author :
Chaix-Pluchery, O. ; Lucazeau, G. ; Meyer, F. ; Aubry-Fortuna, V. ; Madar, R.
Author_Institution :
LMGP
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
176
Lastpage :
177
Keywords :
Annealing; Frequency; Raman scattering; Semiconductor films; Spectroscopy; Substrates; Thermal conductivity; Transistors; Tungsten; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887563
Filename :
887563
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680831
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