DocumentCode
2680885
Title
3W, Q Band Solid State Amplifier
Author
Jerinic, G. ; Fines, J. ; Schindler, M.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
481
Lastpage
483
Abstract
The design of Q band IMPATT diode cavity combiners is discussed. The design is based on a three-step closed form algorithm. The first step is the characterization of the passive circuit (cavity and diode package) using an automatic network analyzer. In the second step, a computer program is used to generate diode device lines. The third step is the load line synthesis for predictable operation as either an injection-locked oscillator or a stable negative resistance amplifier. These procedures were used to design a three-diode, two-stage amplifier using 2-watt, 44-GHz GaAs IMPATT diodes. An output power of 3 watts with 11 dB gain was achieved.
Keywords
Algorithm design and analysis; Circuit synthesis; Diodes; Gallium arsenide; Injection-locked oscillators; Network synthesis; Operational amplifiers; Packaging; Passive circuits; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130954
Filename
1130954
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