Title :
A 16.5 Watt, 20 GHz IMPATT Diode Power Combiner
fDate :
May 31 1983-June 3 1983
Abstract :
Progress in the development of a 20 watt, 20 GHz power combiner with 5 percent bandwidth will be discussed. Six Raytheon high power GaAs double-drift diodes are used. Each diode has four mesas which are TC bonded to the heat-sink to achieve very low thermal resistance. A set of characterization data for the diodes and the combiner will be presented to demonstrate Raytheon´s method for designing power combiners with large bandwidth.
Keywords :
Bandwidth; Circuits; Cogeneration; Contracts; Diodes; Gallium arsenide; Packaging; Power combiners; Resistance heating; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130955
