Title :
The Effect of Dissimilar IMPATT Diodes on Power Combining Efficiency
Author :
Wagner, L. ; Laton, R. ; Wallace, R.
fDate :
May 31 1983-June 3 1983
Abstract :
Experimental results are presented which demonstrate that IMPATT diode preselection by growth wafer is unnecessary in order to achieve good power combining efficiency. With the possible exception of junction capacitance, tight tolerances (<+-10%) on DC or RF characteristics are also found to be unnecessary.
Keywords :
Breakdown voltage; Capacitance; Diodes; Doping profiles; Missiles; Power generation; Radio frequency; Temperature; Testing; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130957
