• DocumentCode
    2680940
  • Title

    The Effect of Dissimilar IMPATT Diodes on Power Combining Efficiency

  • Author

    Wagner, L. ; Laton, R. ; Wallace, R.

  • fYear
    1983
  • fDate
    May 31 1983-June 3 1983
  • Firstpage
    489
  • Lastpage
    491
  • Abstract
    Experimental results are presented which demonstrate that IMPATT diode preselection by growth wafer is unnecessary in order to achieve good power combining efficiency. With the possible exception of junction capacitance, tight tolerances (<+-10%) on DC or RF characteristics are also found to be unnecessary.
  • Keywords
    Breakdown voltage; Capacitance; Diodes; Doping profiles; Missiles; Power generation; Radio frequency; Temperature; Testing; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1983 IEEE MTT-S International
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1983.1130957
  • Filename
    1130957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2680940