DocumentCode :
2681026
Title :
Band structure and transport properties of semiconducting rhenium silicide thin films grown epitaxially on silicon
Author :
Muret, P. ; Ali, Imran ; Nguyen, T.T.A.
Author_Institution :
Laboratoire d´Etudes des Proprietes Electroniques des Solides, CN.R.S.
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
203
Lastpage :
203
Keywords :
Hall effect; Optical films; Optical superlattices; Photonic band gap; Semiconductivity; Semiconductor thin films; Silicides; Silicon; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887576
Filename :
887576
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2681026
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