Title :
An Overload Protected Low-Noise X-Band FET Amplifier
Author :
Niehenke, E.C. ; Steigerwald, T.E.
fDate :
May 31 1983-June 3 1983
Abstract :
Design and performance of a 40 dB gain X-band low-noise FET amplifier with integral overload protection is presented. Noise figures as low as 2 dB have been achieved using packaged transistors, including a multidiode overload protector that protects the FET´s for input pulse powers to 1 kW. Performance is achieved by the use of new embedment circuits for super-low-noise packaged FET and pin diodes in aluminum-clad soft microstrip.
Keywords :
Circuit noise; FETs; Isolators; Low-noise amplifiers; Microstrip; Noise figure; Packaging; Power system protection; Radio frequency; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130972
