Title :
Noise Perfomance of Microwave HEMT
Author :
Joshin, K. ; Mimura, T. ; Ninori, M. ; Yamashita, Y. ; Kosemura, K. ; Saito, J.
fDate :
May 31 1983-June 3 1983
Abstract :
Low noise HEMTs (High Electron Mobility Transistors) with 0.5µm gate have been made using direct electron beam lithography. At 12 GHz a noise figure of 1.4 dB with an associated gain of 11 dB has been obtained at room temperature. Noise figure has been reduced to 0.35 dB by decreasing ambient temperature to 100K.
Keywords :
Frequency; Gallium arsenide; Gold; HEMTs; Metallization; Noise figure; Noise measurement; Semiconductor device measurement; Temperature dependence; Temperature measurement;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130984
