DocumentCode
2681375
Title
Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content
Author
Kawaguchi, M. ; Miyamoto, T. ; Kawakami, S. ; Minobe, S. ; Saitoh, A. ; Koyama, F.
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.
Keywords
III-V semiconductors; gallium compounds; indium compounds; phosphorus; quantum well lasers; semiconductor quantum wells; GaInNAs-GaAsP; barrier layer; lasing characteristics; phosphorous content; strain-compensated lasers; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Optical materials; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277044
Filename
1277044
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