Title :
Analyses of the Evolution of Iron-Silicide Precipitates in Multicrystalline Silicon During Solar Cell Processing
Author :
Schön, Jonas ; Haarahiltunen, A. ; Savin, H. ; Fenning, D.P. ; Buonassisi, T. ; Warta, W. ; Schubert, M.C.
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany
Abstract :
We simulate the precipitation of iron during the multicrystalline ingot crystallization process and the redistribution of iron during subsequent phosphorus diffusion gettering with a 2-D model. We compare the simulated size distribution of the precipitates with the X-ray fluorescence microscopy measurements of iron precipitates along a grain boundary. We find that the simulated and measured densities of precipitates larger than the experimental detection limit are in good agreement after the crystallization process. Additionally, we demonstrate that the measured decrease of the line density and the increase of the mean size of the iron precipitates after phosphorus diffusion gettering can be reproduced with the simulations. The size and spatial distribution of iron precipitates affect the kinetics of iron redistribution during the solar cell process and, ultimately, the recombination activity of the precipitated iron. Variations of the cooling rate after solidification and short temperature peaks before phosphorus diffusion strongly influence the precipitate size distribution. The lowest overall density of iron precipitates after phosphorus diffusion is obtained in the simulations with a temperature peak before phosphorus diffusion, followed by moderate cooling rates.
Keywords :
X-ray emission spectra; X-ray fluorescence analysis; cooling; crystallisation; diffusion; elemental semiconductors; fluorescence; getters; grain boundaries; iron; phosphorus; precipitation; semiconductor process modelling; silicon; solar cells; solidification; 2D model; Si:Fe,P; X-ray fluorescence microscopy measurements; cooling rate variations; detection limit; grain boundary; iron precipitation; iron redistribution kinetics; iron-silicide precipitate evolution analyses; line density; mean size; moderate cooling rates; multicrystalline ingot crystallization process; multicrystalline silicon; overall density; phosphorus diffusion gettering; precipitate densities; precipitate size distribution; recombination activity; short temperature peaks; solar cell processing; solidification; spatial distribution; Cooling; Crystallization; Density measurement; Gettering; Grain boundaries; Iron; Size measurement; Gettering; impurities; semiconductor process modeling;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2012.2212699