Title :
Long-wavelength ridge-waveguide InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy
Author :
Wang, J.S. ; Kovsh, A.R. ; Hsiao, R.S. ; Lin, G. ; Livshits, D.A. ; Chen, I.F. ; Wu, Y.T. ; Chen, L.P. ; Chen, J.F. ; Chi, J.Y.
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
We demonstrate ridge-waveguide InGaAsN/GaAs single quantum well lasers at wavelength 1.3 and 1.4 μm grown by molecular beam epitaxy using radio frequency plasma nitrogen source. Threshold current density of 0.57 and 3.87 KA/cm2 at λ=1.3 and 1.4 μm, respectively, were obtained for the lasers with a 3-μm ridge width and a 2-mm cavity length. Slope efficiencies of 0.67 and 0.37 W/A were obtained for λ=1.3 and 1.4 μm emission, respectively, with cavity length L=1 mm. The cw kink-free output power of wavelength 1.3 μm single lateral mode laser is more than 150 mW, and the maximum total wallplug efficiency of 29% was obtained.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; waveguide lasers; wide band gap semiconductors; 1 mm; 1.3 mum; 1.4 mum; 2 mm; 29 percent; 3 mum; InGaAsN-GaAs; InGaAsN/GaAs lasers; cw kink-free output power; lateral mode laser; long-wavelength lasers; molecular beam epitaxy; radio frequency plasma nitrogen source; ridge-waveguide lasers; single quantum well lasers; threshold current density; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Nitrogen; Plasma density; Plasma sources; Plasma waves; Quantum well lasers; Radio frequency; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277045
