Title :
Characteristics of 1.3 μm InGaNAs light-emitting diodes
Author :
Yang, Hung-Pin D. ; Lu, Chen-Ming ; Livchits, Daniil ; Lin, Gray ; Chen, I-Fan ; Lee, Tsin-Dong ; Chi, Jim Y.
Author_Institution :
Nanophotonics Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
We have made InGaNAs light-emitting diodes for fiber-optic applications at 1.3 μm. The epitaxial layers grown on the n-GaAs substrates in a MOCVD system P-type metal grid lines were formed on the light-emitting aperture for current spreading. A maximum optical power of 0.84 mW was measured at 300 mA. The device characteristics were measured and analyzed.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; semiconductor device measurement; semiconductor epitaxial layers; semiconductor growth; 0.84 mW; 1.3 mum; 300 mA; GaAs; InGaNAs; MOCVD system; P-type metal grid lines; current spreading; epitaxial layers; fiber-optic applications; light-emitting aperture; light-emitting diodes; n-GaAs substrates; Apertures; Epitaxial layers; Gallium arsenide; Light emitting diodes; MOCVD; Optical buffering; Optical fiber communication; Power measurement; Quantum dot lasers; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277046
