DocumentCode
268155
Title
Bow of Silicon Wafers After In-Line High-Rate Evaporation of Aluminum
Author
Mader, C. ; Eitner, U. ; Kajari-Schröder, S. ; Brendel, R.
Author_Institution
Inst. for Solar Energy Res., Hamelin, Germany
Volume
3
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
212
Lastpage
216
Abstract
Contacting silicon solar cells through in-line high-rate evaporation of aluminum leads to thermomechanical stresses and, thus, to bowing of the solar cells. Understanding the formation of the cell bow is essential for improving the deposition process. We deposit 2 μm-thick aluminum layers onto 230 μm-thick planar p-type silicon wafers of edge lengths of 100, 125, and 156-mm and measure the wafer bow after the deposition. The bow is proportional to b2d/W2, where d is the aluminum layer thickness, W the wafer thickness, and b the wafer edge length. We measure a lower bow than expected by the linear elastic stress theory and show this to be caused by plastic deformation in the Al layer. Due to plastic deformation, only the first 70 K of temperature change actually causes a bow.
Keywords
aluminium; bending; elasticity; elemental semiconductors; internal stresses; metallic thin films; plastic deformation; silicon; solar cells; thermomechanical treatment; vacuum deposition; Al; Si; aluminum layer thickness; aluminum leads; bowing; cell bow; deposition process; in-line high-rate evaporation; linear elastic stress theory; plastic deformation; silicon solar cells; silicon wafers; size 100 mm; size 125 mm; size 156 mm; size 2 mum; size 230 mum; temperature 70 K; thermomechanical stresses; wafer bow; wafer edge length; wafer thickness; Aluminum; Photovoltaic cells; Photovoltaic systems; Silicon; Strain; Stress; Temperature measurement; Elastoplastic deformation; in-line evaporation; silicon solar cell; wafer bow;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2012.2218578
Filename
6329922
Link To Document