• DocumentCode
    268155
  • Title

    Bow of Silicon Wafers After In-Line High-Rate Evaporation of Aluminum

  • Author

    Mader, C. ; Eitner, U. ; Kajari-Schröder, S. ; Brendel, R.

  • Author_Institution
    Inst. for Solar Energy Res., Hamelin, Germany
  • Volume
    3
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    212
  • Lastpage
    216
  • Abstract
    Contacting silicon solar cells through in-line high-rate evaporation of aluminum leads to thermomechanical stresses and, thus, to bowing of the solar cells. Understanding the formation of the cell bow is essential for improving the deposition process. We deposit 2 μm-thick aluminum layers onto 230 μm-thick planar p-type silicon wafers of edge lengths of 100, 125, and 156-mm and measure the wafer bow after the deposition. The bow is proportional to b2d/W2, where d is the aluminum layer thickness, W the wafer thickness, and b the wafer edge length. We measure a lower bow than expected by the linear elastic stress theory and show this to be caused by plastic deformation in the Al layer. Due to plastic deformation, only the first 70 K of temperature change actually causes a bow.
  • Keywords
    aluminium; bending; elasticity; elemental semiconductors; internal stresses; metallic thin films; plastic deformation; silicon; solar cells; thermomechanical treatment; vacuum deposition; Al; Si; aluminum layer thickness; aluminum leads; bowing; cell bow; deposition process; in-line high-rate evaporation; linear elastic stress theory; plastic deformation; silicon solar cells; silicon wafers; size 100 mm; size 125 mm; size 156 mm; size 2 mum; size 230 mum; temperature 70 K; thermomechanical stresses; wafer bow; wafer edge length; wafer thickness; Aluminum; Photovoltaic cells; Photovoltaic systems; Silicon; Strain; Stress; Temperature measurement; Elastoplastic deformation; in-line evaporation; silicon solar cell; wafer bow;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2012.2218578
  • Filename
    6329922