Detailed charge pumping evaluation of SIMOX using gated P-I-N diodes

Summary form only given. Results for 0.25-μm-thick SIMOX (separation by implantation of oxygen) films synthesized by high-current implantation of oxygen atoms and annealing above 1300°C are presented. The as-processed material has low background doping and behaves as a fully depleted film. Changing the base level of the pulse while maintaining its height constant allows evaluation of the threshold and flat-band voltages. The plot of the charge pumping (CP) current as a function of the drawn length of the gate provides ΔL and, therefore, the effective channel length. The method of extraction of these three parameters does not require any knowledge of the carrier mobility, channel doping or oxide thickness and thus represents a valuable alternative for technology control. The existence of bulk traps in the Si overlay is explored by pulsing the two gates simultaneously according to the principle of volume inversion. The method is validated by using both trapezoidal and triangular pulses and comparing results obtained in gated diodes and five-terminal transistors