• DocumentCode
    2681682
  • Title

    Photovoltaic cell characteristics for high intensity laser light

  • Author

    Miyakawa, Hiroshi ; Tanaka, Yosuke ; Kurokawa, Takashi

  • Author_Institution
    Graduate Sch. of Electron. & Inf. Technol., Tokyo Univ. of Agric. & Technol., Japan
  • Volume
    2
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    Photovoltaic cell characteristics for high intensity laser light including Si, GaAs, InGaAs photovoltaic cells and an uni-traveling-carrier photodiode are investigated. We estimate the values of the series resistance of photovoltaic cells and clarify that the extremely small series resistance is important to obtain higher conversion efficiency especially for high intensity laser light.
  • Keywords
    III-V semiconductors; electric resistance; elemental semiconductors; gallium arsenide; indium compounds; photodiodes; photovoltaic cells; silicon; solid lasers; GaAs; InGaAs; PV cells; Si; conversion efficiency; high intensity laser light; photovoltaic cell characteristics; series resistance; unitraveling-carrier photodiode; Diode lasers; Electric resistance; Fiber lasers; Gallium arsenide; Information technology; Optical fibers; Optical films; Photovoltaic cells; Ultraviolet sources; Wavelength conversion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1277063
  • Filename
    1277063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2681682