The study on InGaAsP/InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure

Author

Heo, D. ; Bae, H.C. ; Lee, J.I. ; Jeong, J. ; Han, I.K.

Author_Institution

Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

Volume

2

fYear

2003

fDate

15-19 Dec. 2003

Abstract

We improved the performance of InGaAsP/InGaAs 1.55 μm multi-quantum well laser diodes with differently highly p-doped layers in the two-step separate confinement heterostructure (SCH) by inserting additional InGaAsP layer in n-SCH, which makes asymmetric field distribution and reduces the optical loss in highly p-doped regions. To reduce the inevitable optical loss that maybe due to high-level doping, we inserted additional 100 nm InGaAsP layer in the 1st n-SCH, which shifts the field distribution from highly p-doped regions with high loss to intrinsic or n-doped region with relatively low loss, and improved the light-current characteristics.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microcavity lasers; optical losses; quantum well lasers; semiconductor doping; 1.55 mum; InGaAsP layer; InGaAsP-InGaAs; InGaAsP/InGaAs 1.55 μm multi-quantum well laser diodes; InGaAsP/InGaAs MQW-LD; MQW active layer; asymmetric field distribution; asymmetric separate confinement heterostructure; electron overflow; light-current characteristics; n-doped region; optical loss; p-doped layers; two-step separate confinement heterostructure; Absorption; Diode lasers; Doping profiles; Effective mass; Electrons; Indium gallium arsenide; Marine vehicles; Microwave devices; Optical losses; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1277064

Filename

1277064