DocumentCode
2681804
Title
Low temperature fabrication of high mobility poly-Si TFTs for large area LCDs
Author
Serikawa, Tadashi ; Shirai, Seiiti ; Okamoto, Akio ; Suyama, Shiro
Author_Institution
Appl. Electron. Lab., NTT, Tokyo, Japan
fYear
1988
fDate
4-6 Oct. 1988
Firstpage
222
Lastpage
225
Abstract
A low-temperature process for fabricating high-mobility poly-Si TFTs (thin-film transistors) is presented. Its main feature is its use of sputter-deposited Si film followed by laser irradiation and sputter-deposited gate SiO/sub 2/ film. The resulting TFTs have excellent characteristics and have been successfully applied to peripheral circuits for large-area liquid-crystal displays.<>
Keywords
elemental semiconductors; liquid crystal displays; semiconductor technology; silicon; sputtered coatings; thin film transistors; high mobility thin film transistor; large-area liquid-crystal displays; low temperature fabrication; peripheral circuits; polycrystalline Si; semiconductor technology; sputter deposited SiO/sub 2/; Amorphous materials; Circuits; Fabrication; Glass; Grain size; Liquid crystal displays; Semiconductor films; Substrates; Temperature dependence; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Display Research Conference, 1988., Conference Record of the 1988 International
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/DISPL.1988.11316
Filename
11316
Link To Document