Title :
Low temperature fabrication of high mobility poly-Si TFTs for large area LCDs
Author :
Serikawa, Tadashi ; Shirai, Seiiti ; Okamoto, Akio ; Suyama, Shiro
Author_Institution :
Appl. Electron. Lab., NTT, Tokyo, Japan
Abstract :
A low-temperature process for fabricating high-mobility poly-Si TFTs (thin-film transistors) is presented. Its main feature is its use of sputter-deposited Si film followed by laser irradiation and sputter-deposited gate SiO/sub 2/ film. The resulting TFTs have excellent characteristics and have been successfully applied to peripheral circuits for large-area liquid-crystal displays.<>
Keywords :
elemental semiconductors; liquid crystal displays; semiconductor technology; silicon; sputtered coatings; thin film transistors; high mobility thin film transistor; large-area liquid-crystal displays; low temperature fabrication; peripheral circuits; polycrystalline Si; semiconductor technology; sputter deposited SiO/sub 2/; Amorphous materials; Circuits; Fabrication; Glass; Grain size; Liquid crystal displays; Semiconductor films; Substrates; Temperature dependence; Thin film transistors;
Conference_Titel :
Display Research Conference, 1988., Conference Record of the 1988 International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/DISPL.1988.11316
