Title :
Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates
Author :
Wei Dou ; Liqiang Zhu ; Jie Jiang ; Qing Wan
Author_Institution :
Key Lab. for Micro-Nano Optoelectron. Devices of Minist. of Educ., Hunan Univ., Changsha, China
Abstract :
Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO2-covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 μF/cm2) due to the electric-double-layer effect. The subthreshold swing, drain-current on/off ratio, and field-effect mobility are estimated to be 80 mV/dec, 4 ×106, and 9.3 cm2/V·s, respectively. Low-voltage operation mechanism and threshold voltage modulation of such dual-gate paper TFTs are investigated.
Keywords :
carrier mobility; diffraction; masks; paper; silicon compounds; substrates; thin film transistors; SiO2; drain-current on-off ratio; electric-double-layer effect; flexible dual-gate oxide TFT gate; held-effect mobility; large gate specihc capacitance; low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors; paper substrates; shadow mask diffraction method; solution-processed chitosan gate dielectric films; subthreshold swing; Capacitance; Indium tin oxide; Logic gates; Substrates; Thin film transistors; Threshold voltage; Chitosan; dual-gate thin-film transistors (TFTs); paper electronics; threshold voltage modulation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2231661
