Title :
A lift-off process to build edge junction MIM active device arrays (LCD application)
Author :
Wisnieff, R.L. ; Lien, A. ; Griffith, Jon H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A novel fabrication process is presented for tantalum pentoxide MIM displays that allows edge junctions to be used without the parasitic elements required in previous processes. This process has large tolerance to photolithographic alignment error because the junction area is determined by the thickness of a thin-film deposition. Experimental devices show that the process can produce devices with the same junction parameters as previous fabrication procedures, and that it can be scaled to produce high-resolution displays.<>
Keywords :
field effect integrated circuits; integrated circuit technology; liquid crystal displays; metal-insulator-metal devices; photolithography; semiconductor technology; tantalum compounds; LCD; MIM active device arrays; Ta/sub 2/O/sub 5/; active matrix switching elements; edge junctions; high-resolution displays; lift-off process; photolithographic alignment error; thin-film deposition; Active matrix liquid crystal displays; Fabrication; Glass; Gray-scale; Insulation; Liquid crystal displays; MIM capacitors; Parasitic capacitance; Resists; Transmission line matrix methods;
Conference_Titel :
Display Research Conference, 1988., Conference Record of the 1988 International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/DISPL.1988.11317
