Title :
Degradation data-based quantitative qualification for high reliable microelectronic device
Author :
Sun, Bo ; Cui, Jiuzheng ; Feng, Qiang
Author_Institution :
Sch. of Reliability & Syst. Eng., BEIHANG Univ., Beijing, China
Abstract :
The quality (or reliability) cannot be qualified for high reliable microelectronic devices (failure rate less than 10-6/h) through qualification and quality conformance procedures in military standard. A method of quantitative qualification is proposed based on the distribution of degraded tests parameters for Destructive Physical Analysis (DPA). Firstly, based on the 5005.2 method (qualification and quality conformance procedures) in GJB 548B, a new inspection program is proposed for high reliable microelectronic devices. Then, the basic theory, general process, and mathematical model for quantitative qualification are presented. Finally, a quantitative value of failure rate or reliability for microelectronic devices can be drawn according to the new inspection program and qualification method. The case study conducted on programmable timer samples shows that the failure rate or reliability of high reliable microelectronics can be qualified quantitatively.
Keywords :
inspection; integrated circuit reliability; degradation data-based quantitative qualification; failure rate; inspection program; mathematical model; microelectronic device reliability; physical analysis; Degradation; Force; Inspection; Microelectronics; Qualifications; Reliability; Weibull distribution; degradation data; high reliability; microelectronic device; quantitative qualification;
Conference_Titel :
Reliability, Maintainability and Safety (ICRMS), 2011 9th International Conference on
Conference_Location :
Guiyang
Print_ISBN :
978-1-61284-667-5
DOI :
10.1109/ICRMS.2011.5979254