DocumentCode
2682420
Title
High Efficiency GaAs MBE Power FETs for Ka-Band
Author
Geddes, J. ; Sokolov, V. ; Contolatis, T. ; Abrokwah, J. ; Larson, W.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
102
Lastpage
105
Abstract
Submicron gate length, 300 Micron gate width GaAs FETs were fabricated on MBE material using direct write e-beam lithography. Evaluation of the devices in a Ka-band test fixture with fin line transitions resulted in an amplifier output power of 110 mw with 11 percent power added efficiency at 30 GHz. At 2.9 dB gain the power per unit gate width is .46 W/mm referenced to the device. This is the highest power output per unit gate width reported to date for a GaAs FET at Ka-band.
Keywords
FETs; Fixtures; Frequency; Gain; Gallium arsenide; Lithography; Phased arrays; Power amplifiers; Power generation; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131704
Filename
1131704
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