The research of relationship between the void of DBC and the temperature distribution

Author

Xiaofei, Lv ; Libing, Zheng ; Xiangdong, Kong ; Pengyun, Jin ; Li, Han

Author_Institution

Grad. Sch. of Chinese Acad. of Sci., Beijing, China

fYear

2011

fDate

25-28 Oct. 2011

Firstpage

168

Lastpage

171

Abstract

DBC (Direct bonding Copper) is the most common substrate of IGBT power module in recent years. The existence of voids between the copper and the ceramic is the main process defect. The temperature distribution is multiple because of the differences in the ratio and location of the voids. In this paper, the integration of the test and numerical simulation is used to research the temperature distribution of DBC with different ratios of voids and loads. The results show that the location of the voids between the copper and the ceramic influence the temperature distribution of DBC clearly.

Keywords

bonding processes; ceramics; copper; insulated gate bipolar transistors; numerical analysis; IGBT power module; ceramic influence; direct bonding copper; insulated gate bipolar transistor; numerical simulation; temperature distribution; Computed tomography; Copper; Insulated gate bipolar transistors; Load modeling; Loading; Temperature distribution; Testing; DBC IGBT void FEM;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Packaging Materials (APM), 2011 International Symposium on

Conference_Location

Xiamen

ISSN

1550-5723

Print_ISBN

978-1-4673-0148-0

Type

conf

DOI

10.1109/ISAPM.2011.6105692

Filename

6105692