Title :
The research of relationship between the void of DBC and the temperature distribution
Author :
Xiaofei, Lv ; Libing, Zheng ; Xiangdong, Kong ; Pengyun, Jin ; Li, Han
Author_Institution :
Grad. Sch. of Chinese Acad. of Sci., Beijing, China
Abstract :
DBC (Direct bonding Copper) is the most common substrate of IGBT power module in recent years. The existence of voids between the copper and the ceramic is the main process defect. The temperature distribution is multiple because of the differences in the ratio and location of the voids. In this paper, the integration of the test and numerical simulation is used to research the temperature distribution of DBC with different ratios of voids and loads. The results show that the location of the voids between the copper and the ceramic influence the temperature distribution of DBC clearly.
Keywords :
bonding processes; ceramics; copper; insulated gate bipolar transistors; numerical analysis; IGBT power module; ceramic influence; direct bonding copper; insulated gate bipolar transistor; numerical simulation; temperature distribution; Computed tomography; Copper; Insulated gate bipolar transistors; Load modeling; Loading; Temperature distribution; Testing; DBC IGBT void FEM;
Conference_Titel :
Advanced Packaging Materials (APM), 2011 International Symposium on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4673-0148-0
DOI :
10.1109/ISAPM.2011.6105692
