Title :
Distributed GaAs FET Circuit Model for Broadband and Millimeter Wave Applications
Author :
LaRue, R. ; Yuen, C. ; Zdasiuk, G.
fDate :
May 30 1984-June 1 1984
Abstract :
In this distributed. paper, the Z-parameters of a fully equivalent circuit MESFET model are presented as simple, closed-form expressions. The benefit of this new model is to extend the frequency range of accurate, predicted device performance beyond that of a simple lumped element model . Comparison with the simpler circuit model shows differences at frequencies beyond 18 GHz for a 285-micron x 0.5-micron GaAs MESFET.
Keywords :
Equivalent circuits; FET circuits; Frequency; Gallium arsenide; MESFETs; Millimeter wave circuits; Predictive models; Scattering parameters; Transmission line theory; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131725
