DocumentCode
2682769
Title
Distributed GaAs FET Circuit Model for Broadband and Millimeter Wave Applications
Author
LaRue, R. ; Yuen, C. ; Zdasiuk, G.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
164
Lastpage
166
Abstract
In this distributed. paper, the Z-parameters of a fully equivalent circuit MESFET model are presented as simple, closed-form expressions. The benefit of this new model is to extend the frequency range of accurate, predicted device performance beyond that of a simple lumped element model . Comparison with the simpler circuit model shows differences at frequencies beyond 18 GHz for a 285-micron x 0.5-micron GaAs MESFET.
Keywords
Equivalent circuits; FET circuits; Frequency; Gallium arsenide; MESFETs; Millimeter wave circuits; Predictive models; Scattering parameters; Transmission line theory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131725
Filename
1131725
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