Title :
V-Band Double-Drift Read Silicon IMPATTs
Author :
Ma, Y.E. ; Nakaji, E.M. ; Thrower, W.F.
fDate :
May 30 1984-June 1 1984
Abstract :
Double-drift hybrid Read silicon IMPATTs have been fabricated in the millimeter-wave frequency range with RF performance superior to that of more conventional double-drift flat diodes. State-of-the-art output power of 2.15 W was obtained at 60 GHz with 8.8 percent efficiency. The best DC-to-RF conversion efficiency achieved was 12 percent.
Keywords :
Capacitance measurement; Diodes; Electrical resistance measurement; Metallization; Millimeter wave technology; Power generation; Radio frequency; Silicon; Temperature; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131726
