Title :
Field Analysis of Millimeter-Wave GaAs Double-Drift IMPATT Diode in the Travelling-Wave Mode
Author :
Fukuoka, Y. ; Itoh, T.
fDate :
May 30 1984-June 1 1984
Abstract :
An analysis of a realistic model of distributed lMPATT structures is described. Wave equations are solved with all losses included. The results show that net gain is produced at frequencies just above the avalanche resonance, while the propagation becomes slow at high frequencies. The results compare favorably with experiment.
Keywords :
Boundary conditions; Charge carrier processes; Conductivity; Current density; Differential equations; Diodes; Frequency; Gallium arsenide; Propagation constant; Resonance;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131727
