DocumentCode
2682809
Title
Field Analysis of Millimeter-Wave GaAs Double-Drift IMPATT Diode in the Travelling-Wave Mode
Author
Fukuoka, Y. ; Itoh, T.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
169
Lastpage
171
Abstract
An analysis of a realistic model of distributed lMPATT structures is described. Wave equations are solved with all losses included. The results show that net gain is produced at frequencies just above the avalanche resonance, while the propagation becomes slow at high frequencies. The results compare favorably with experiment.
Keywords
Boundary conditions; Charge carrier processes; Conductivity; Current density; Differential equations; Diodes; Frequency; Gallium arsenide; Propagation constant; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131727
Filename
1131727
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