Title :
SF6-N2 gas mixtures: Optical investigation of the discharge development under fast oscillating impulse stress in a non-uniform gap
Author_Institution :
Inst. fur Hochspannungstech., Tech. Hochschule Aachen, Germany
Abstract :
In the case of nonuniform fields, the insulation performance of SF 6-gas insulated switchgear GIS is strongly reduced. The discharge development in a coaxial electrode configuration with a needle protrusion (nonuniform gap) was investigated for different SF6/N2 gas mixtures (5/95, 10/90, 30/70) and pressures (0.1 MPa to 0.3 MPa). The configuration was stressed by low damped monofrequent oscillations up to 20 MHz with amplitudes of about 400 kV. The main focus of this paper are stresses with 10 MHz oscillations. The performance of SF6-N2 gas mixtures is described by a factor of merit by means of the comparison with pure SF6 and N2. Predischarge current measurements were recorded by means of a Rogowski-coil, inside the inner grounded electrode. The high sensitivity and the fast response time of the measuring system enable a simultaneous detection of displacement current, superimposed partial- and predischarge impulses. The light emission caused by local extension of the discharge development, was recorded by a high speed image converter camera. Different figures of streak records are presented and illustrate the influence of the SF6 percentage in the mixture and the entire gas pressure on the discharge development
Keywords :
SF6 insulation; gas insulated switchgear; gas mixtures; high-frequency discharges; nitrogen; plasma diagnostics; 0.1 to 0.3 MPa; 10 MHz; Rogowski-coil; SF6-N2; SF6-N2 gas mixtures; coaxial electrode configuration; discharge development; displacement current; fast oscillating impulse stress; gas insulated switchgear; gas pressure; high speed image converter camera; insulation performance; light emission; nonuniform gap; predischarge impulses; response time; sensitivity;
Conference_Titel :
Dielectric Materials, Measurements and Applications, 2000. Eighth International Conference on (IEE Conf. Publ. No. 473)
Conference_Location :
Edinburgh
Print_ISBN :
0-85296-730-6
DOI :
10.1049/cp:20000497