• DocumentCode
    2683074
  • Title

    Third-Order Nonlinearity of GaAs MESFET´s

  • Author

    Abeles, J.H. ; Wemple, S.H. ; Schlosser, W.O.W. ; Beccone, J.P.

  • fYear
    1984
  • fDate
    May 30 1984-June 1 1984
  • Firstpage
    224
  • Lastpage
    226
  • Abstract
    Direct linearity measurements at 6 GHz show that Bell Labs GaAs MESFET´s are effectively third-order in AM/PM up to output powers near saturation, and that AM/AM can be made negligible through bias adjustment. This permits the use of predistortion techniques to attain extremely high linearity power amplification.
  • Keywords
    Bridge circuits; Gallium arsenide; Linearity; MESFETs; Phase distortion; Phase measurement; Power generation; Power measurement; Predistortion; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1984 IEEE MTT-S International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1984.1131744
  • Filename
    1131744
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2683074