• DocumentCode
    2683259
  • Title

    A comparison of copper sulfate and methanesulfonate electrolytes in the copper plating process for through silicon via metallization

  • Author

    Wu, H. L Henry ; Lee, S. W Ricky

  • Author_Institution
    Center for Adv. Microsyst. Packaging, Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    291
  • Lastpage
    296
  • Abstract
    In this study, authors studied and compared the behaviors of the additives in copper sulfate and cupric methanesulfonate electrolytes by means of electrochemical measurement method with a rotary electrode. The electrochemical parameters including exchange current density and cathodic transfer coefficient of the electrolytes were successfully determined utilizing linear sweep voltammetry. Chronoamperometry (CA) was conducted to verify the diffusion time of additives to the surface of electrodes and the corresponding diffusion constants were characterized. Copper plating of 50/200 μm TSVs was achieved with copper sulfate and cupric methanesulfonate electrolytes respectively. The plated surface morphologies were studied using Scanning Electron Microscopy (SEM).
  • Keywords
    copper compounds; electrochemical electrodes; electrolytes; electroplating; organic compounds; scanning electron microscopy; surface morphology; three-dimensional integrated circuits; voltammetry (chemical analysis); CA; CuSO4; SEM; cathodic transfer coefficient; chronoamperometry; copper plating process; cupric methanesulfonate electrolyte; current density; electrochemical measurement method; linear sweep voltammetry; plated surface morphology; rotary electrode; scanning electron microscopy; size 200 mum; size 50 mum; through silicon via metallization; Additives; Copper; Current density; Electrodes; Filling; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Packaging Materials (APM), 2011 International Symposium on
  • Conference_Location
    Xiamen
  • ISSN
    1550-5723
  • Print_ISBN
    978-1-4673-0148-0
  • Type

    conf

  • DOI
    10.1109/ISAPM.2011.6105719
  • Filename
    6105719