Investigation of deep levels in AlGaN/GaN HEMTs on silicon substrate by conductance deep level transient spectroscopy

Author

Mosbahi, H. ; Gassoumi, M. ; Charfeddine, M. ; Gaquiere, C. ; Zaidi, M.A. ; Maaref, H.

Author_Institution

Dept. de Phys., Lab. de micro-optoelectroniques et Nanostruct., Monastir, Tunisia

fYear

2010

fDate

23-25 March 2010

Firstpage

1

Lastpage

3

Abstract

We report investigation of electron traps in AlGaN/GaN HEMTs, grown on silicon by molecular beam epitaxy. Deep levels analysis was performed by conductance deep level transient spectroscopy (CDLTS) under a drain pulse. CDLTS measurements reveal three traps with the energy levels of 0.11, 0.17 and 0.22 eV.

Keywords

III-V semiconductors; aluminium compounds; deep level transient spectroscopy; electron traps; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT; CDLTS measurements; Si; conductance deep level transient spectroscopy; deep level analysis; drain pulse; electron traps; electron volt energy 0.11 eV; electron volt energy 0.17 eV; electron volt energy 0.22 eV; energy levels; molecular beam epitaxy; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; MODFETs; Molecular beam epitaxial growth; Performance analysis; Silicon; Spectroscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2010 5th International Conference on

Conference_Location

Hammamet

Print_ISBN

978-1-4244-6338-1

Type

conf

DOI

10.1109/DTIS.2010.5487570

Filename

5487570