Dopant free multi-gate silicon nanowire CMOS-inverter on SOI substrate

In this work, we report on the fabrication and characterization of voltage-programmable (VP) nanowire (NW) field-effect-transistor (FET) devices suitable to extend the flexibility in circuit design, i.e. of reconfigurable logic. Ultra-thin silicon NW-structures with mid-gap Schottky S/D junctions on silicon-on-insulator (SOI) substrate have been fabricated as dopant free unipolar CMOS transistors. The desired device type, i.e. NMOS or PMOS, is selected by applying an appropriate back-gate bias voltage. The programming capability of the devices fabricated using this approach is demonstrated experimentally using a VP-NW-CMOS inverter circuit on a multi-SOI-like set-up.