DocumentCode
2683316
Title
Influence of multiple reflows and thermal shock on interfacial IMC of solder joints between Sn0.3Ag0.7Cu solder/pads(HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes)
Author
Wei, Guoqiang ; Luo, Daojun ; Shi, Lei ; He, Guanghui
Author_Institution
South China Univ. of Technol., Guangzhou, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
302
Lastpage
307
Abstract
The effects of multiple reflows and thermal shock on interfacial reaction of the solder joints between Sn-0.3Ag-0.7Cu solder/pads (HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes) were systematically investigated in this work. The results showed that the scallop Cu6Sn5 phase were formed in HASL and OSP finish pads during reflows, whereas the cylinder-type (Cu, Ni)6Sn5 near the solder and needle-type (Ni, Cu)3Sn4 adjacent to the Ni layer were formed in electrolytic Ni/Au and ENIG finish pads. For all the four kinds of finishes, the thickness of IMCs increased with reflow times increasing, and the interfacial IMCs growth was controlled by grain boundary diffusion; the growth rate at Cu surface was faster than at Ni surface. Furthermore, it was also indicated that the interfacial IMCs growth were not notable with thermal shock cycle numbers increasing, but Kirkendall voids could be observed in the Sn-Cu-Ni intermetallic compounds layer for electrolytic Ni/Au and ENIG Finish Under thermal shock tests.
Keywords
chemical interdiffusion; copper alloys; gold alloys; nickel alloys; printed circuit manufacture; reflow soldering; silver alloys; thermal shock; tin alloys; voids (solid); ENIG PCB finish; HASL; Kirkendall voids; Ni-Au; OSP; Sn-Ag-Cu; electroless nickel and immersion gold; electrolytic finish; hot air solder leveling; interfacial IMC; intermetallic compounds layer; multiple reflow; organic solderability preservative; solder joints; thermal shock; Compounds; Copper; Electric shock; Gold; Nickel; Reliability; Soldering;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Packaging Materials (APM), 2011 International Symposium on
Conference_Location
Xiamen
ISSN
1550-5723
Print_ISBN
978-1-4673-0148-0
Type
conf
DOI
10.1109/ISAPM.2011.6105721
Filename
6105721
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