DocumentCode
2683352
Title
Session 11: Noise and Frequency Stabilization of FET Oscillators
Author
Sechi, F.N.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
265
Lastpage
265
Abstract
This session addresses the topic of improving the noise and the frequency stability of FET oscillators. These are important characteristics directly affecting the performance of devices in practical systems. Over the last decade numerous studies have been reported on the design and the performance of FET oscillators, about their feedback implementation, the various circuit topologies, and the techniques for frequency stabilization, often employing dielectric resonators. The best design techniques also included non-linear modelling. Thus, the general design method for achieving oscillation at the required frequency and with required level of output power and efficiency is well established. Also, the reported performances have been excellent, with high levels of efficiency and operating frequencies well into the millimeter wave range. As a result FET oscillators have become attractive for application in many microwave systems, specifically in those having a limited amount of DC power available, or already built with FET technology.
Keywords
Circuit noise; Circuit stability; Circuit topology; Design methodology; Dielectrics; Frequency; Microwave FETs; Millimeter wave technology; Oscillators; Power system modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131761
Filename
1131761
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